Silicon Germanium Low Noise Amplifier for LTE,SGM13005L2 Replace BGA7L1BN6.
SGM13005L2 SGM13005L2.pdf
FEATURES

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PIN CONFIGUTION
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BGA7L1BN6 BGA7L1BN6.pdf

No.11456

FEATURES

? Insertion power gain: 13.6 dB

? Low noise figure: 0.75 dB

? Low current consumption: 4.9 mA

? Insertion Loss in bypass mode: -2.2 dB

? Operating frequencies: 716 - 960 MHz

? Two-state control: Bypass- and High gain-Mode

? Supply voltage: 1.5 V to 3.6 V

? Digital on/off switch (1V logic high level)

? Ultra small TSNP-6-2 leadless package 

  (footprint: 0.7 x 1.1 mm2)

? B7HF Silicon Germanium technology

? RF output internally matched to 50 Ω

? Only 1 external SMD component necessary

? Pb-free (RoHS compliant) package

PIN CONFIGUTION
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