Silicon Germanium Low Noise Amplifier for LTE,SGM13005L3 Replace BGA7L1N6.
SGM13005L3 SGM13005L3.pdf
FEATURES

资料完善中













PIN CONFIGUTION
优势替代
BGA7L1N6 BGA7L1N6.pdf

No.11457

FEATURES

? Insertion power gain: 13.3 dB

? Low noise figure: 0.90 dB

? Low current consumption: 4.4 mA

? Operating frequencies: 728 - 960 MHz

? Supply voltage: 1.5 V to 3.3 V

? Digital on/off switch (1V logic high level)

? Ultra small TSNP-6-2 leadless package 

  (footprint: 0.7 x 1.1 mm2)

? B7HF Silicon Germanium technology

? RF output internally matched to 50 Ω

? Only 1 external SMD component necessary

? 2kV HBM ESD protection (including AI-pin)

? Pb-free (RoHS compliant) package

PIN CONFIGUTION
网站地图