Dual N-Channel Enhancement Mode Field Effect Transistor
P2803HVG P2803HVG.pdf

No.10576

FEATURES

? V(BR)DSS: 30V

? RDS(ON): 27.5mΩ

? ID: 7A

DESCRIPTION

Dual N-Channel Enhancement Mode Field Effect Transistor

APPLICATION CIRCUIT
PIN CONFIGUTION
网站地图